Abstract
The structure of oxygen-related luminescence centres in nominally undoped and Y2O3-doped AIN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped at an oxygen impurity which substitutes for a nitrogen (ON)−. The defect structure of the acceptor was established by ENDOR to be a hole trapped at an ON-VAl complex (VAl = Al vacancy).
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