Abstract
The magnetic properties of multilayer Gd/Si/Co magnetic films are experimentally studied by electron magnetic resonance and analyzed theoretically. The introduction of a semiconductor silicon interlayer is found to substantially affect the magnetic interlayer coupling and the magnetic dynamics of the system. The interlayer coupling is shown to be ferromagnetic for the (Gd/Si)n films and to be antiferromagnetic for the (Gd/Si/Co/Si)n films. The temperature dependences of the exchange parameters and the gyromagnetic ratios are determined. Possible mechanisms responsible for the formation of the interlayer coupling are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have