Abstract
Abstract Magnetic relaxation was measured on a κ-(ET) 2 Cu[N(CN) 2 ]Br (ET=BEDT-TTF) single crystal for H/b (perpendicular to the conducting layers) at 6 K. The relaxation rate, dM/dlnt was found to have a maximum at 30 G. This maximum in the relaxation rate is thought to be the field of full penetration. H ∗ , and agrees with the peak observed in the magnetization measurements for H//b at 6 K. The field dependence of the relaxation rate can be described by a thermally activated flux creep model where U o ≈8.3 meV.
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