Abstract
The magnetic relaxation and critical current density have been measured on a ${\mathrm{MgB}}_{2}$ thin film in a wide region of temperature with magnetic field up to 8 T. The irreversibility line has also been determined. It is found that the relaxation rate has a very weak temperature dependence below ${1/2T}_{c},$ showing a clear residual relaxation rate at 0 K, which cannot be easily explained as due to thermally activated flux creep. Furthermore, the relaxation rate has a strong field dependence. The flux dynamics of thin films is very similar to that of high-pressure synthesized bulks although the relaxation rate in thin film is systematically higher than that of a bulk sample. All the results here together with those from bulk samples suggest that the flux dynamics may be dominated by quantum effects, such as quantum fluctuation and tunneling.
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