Abstract
A single crystal of UFeSi has been grown and studied with respect to crystal structure, magnetic and electrical resistivity behavior. UFeSi crystallizes in the orthorhombic TiNiSi-type crystal structure and shows no signs of magnetic ordering. The temperature dependence of magnetic susceptibility measured in all three principal crystallographic directions is weakly temperature-dependent, nevertheless it exhibits easy-plane magnetocrystalline anisotropy. The broad χ( T) maximum around 80 K observed in the a–c plane is reminiscent of spin-fluctuation behavior. The temperature dependence of electrical resistivity measured for a current along the b-axis obeys quadratic dependence for temperatures below 33 K and shows a tendency to saturation at high temperatures typical for most U intermetallics.
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