Abstract
Pr-Co (0–20 at. % Pr) and Nd-Co (0–20 at. % Nd) thin films have been deposited by means of ion beam sputtering. Both films deposited at substrate temperature Ts about 70 °C have amorphous crystal structure and small coercive force Hc (Pr-Co: <70 Oe, Nd-Co: <4 Oe). The amorphous Pr-Co film is crystallized by the annealing at a temperature of 600 °C and becomes to have large Hc above 2 kOe, though it should be coated with SiO thin films to prevent the oxidation of the film even if the annealing were performed in a vacuum (∼10−6 Torr). On the other hand, the Pr-Co film deposited at Ts in the range from 200 to 300 °C is a mixture of an amorphous phase with low Hc (<100 Oe) and the crystalline one with large Hc (>2 kOe). The volume fraction of the amorphous phase decreases as Ts increases, and the amorphous phase disappears in the film deposited at Ts above 300 °C. Hc of these films depends on film composition and takes a maximum value at the composition around PrCo5. Nd-Co films deposited at Ts above 250 °C have crystalline phase and show similar dependence of Hc (<300 Oe) as the Pr-Co film does, although they do not have so large Hc as the Pr-Co film has.
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