Abstract

The magnetic properties of a Permalloy antidot array in square lattice geometry, with circular-rhomboidal hole shape and fabricated by interference laser lithography and ion-beam sputtering have been reported. Magneto-optical Kerr effect magnetometry indicated that the sample exhibits four-fold anisotropic behaviour, i.e. different magnetization loops were observed when the external magnetic field was applied along either x- or y-axis, or along the array diagonal. Broadband ferromagnetic resonance measurements revealed a rich variety of different magnetization configurations in the unsaturated state that can be controlled by the orientation of the external magnetic field. Micromagnetic simulations have been performed to explain the observed results. On the contrary, in the saturated regime the system demonstrated almost isotropic magnetic behaviour that improves with external field increase. The obtained results show the potential of interference lithography for the fabrication of large area antidot arrays.

Highlights

  • With the development of lithographic techniques, preparation and characterization of patterned magnetic nanostructures is one of the most active areas of research in magnetism

  • Magneto-optical Kerr effect magnetometry indicated that the sample exhibits four-fold anisotropic behaviour, i.e. different magnetization loops were observed when the external magnetic field was applied along either x- or y-axis, or along the array diagonal

  • As soon as the external magnetic field was reduced, holes act as well-defined magnetization pinning centers affecting the nucleation and movement of domain walls

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Summary

Introduction

With the development of lithographic techniques, preparation and characterization of patterned magnetic nanostructures is one of the most active areas of research in magnetism. Patterned nanostructures are mostly prepared by e-beam lithography (EBL) technique that uses an electron beam to expose an electron-sensitive resist. In case of large area patterning, laser interference lithography (IL), when not as versatile as EBL, is much more cost effective. It has been demonstrated that their magnetic properties depend on the structure geometry, such as the hole diameter, inter-hole distance and film thickness. These parameters induce periodic demagnetization field distributions that affect the magnetization reversal process by controlling the nucleation and movement of domain walls.

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