Abstract
Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)
Highlights
Transition metal doped germanium based diluted magnetic semiconductors are of significant scientific and technological interest due to their use in semiconductor-based spintronic devices such as magneto-optoelectronic devices, spin field-effect transistors, and spin logic devices [1,2,3]
The majority of Mn doped Ge films reported to date contain different magnetic phases and precipitates depending on the distribution of Mn atoms in Ge, which is mainly governed by Mn diffusion mechanism during growth procedure [6,7]
Ion implantation and low temperature synthesis techniques with very low doping concentration are highly desirable to minimize precipitate formation, but the main disadvantage of these growth processes is the large number of defects that are introduced during growth [8,9,10,11]
Summary
Transition metal doped germanium based diluted magnetic semiconductors are of significant scientific and technological interest due to their use in semiconductor-based spintronic devices such as magneto-optoelectronic devices, spin field-effect transistors, and spin logic devices [1,2,3]. The majority of Mn doped Ge films reported to date contain different magnetic phases and precipitates depending on the distribution of Mn atoms in Ge, which is mainly governed by Mn diffusion mechanism during growth procedure [6,7]. A comparative experimental study on the local structures and magnetic interactions of Mn atoms in crystalline and amorphous Ge is important to understand the effect of defects on the distribution. Controversial issues still remain in the distribution of magnetic moments in Mn-doped crystalline and amorphous Ge thin films [12,13,14,15,16]. This work presents a systematic study of the magnetic properties of Mn-doped amorphous (a-MnGe) and crystalline (c-MnGe) Ge films prepared by solid phase epitaxy where Mn is deposited on Ge at room temperature, and subsequently annealed at elevated temperature. Results indicate that a-MnGe film shows clear room temperature ferromagnetism and the magnetic interactions weaken with the increasing crystalline order
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