Abstract
Mn4N is a compound magnetic material that can be grown using MBE while exhibiting several desirable magnetic properties such as strong perpendicular magnetic anisotropy, low saturation magnetization, large domain size, and record high domain wall velocities. In addition to its potential for spintronic applications exploiting spin orbit torque with epitaxial topological insulator/ferromagnet bilayers, the possibility of integrating Mn4N seamlessly with the wide bandgap semiconductors GaN and SiC provides a pathway to merge logic, memory and communication components. We report a comparative study of MBE grown Mn4N thin films on four crystalline substrates: cubic MgO, and hexagonal GaN, SiC and sapphire. Under similar growth conditions, the Mn4N film is found to grow single crystalline on MgO and SiC, polycrystalline on GaN, and amorphous on sapphire. The magnetic properties vary on the substrates and correlate to the structural properties. Interestingly, the field dependent anomalous Hall resistance of Mn4N on GaN shows different behavior from other substrates such as a flipped sign of the anomalous Hall resistance.
Highlights
Epitaxial growth of ferromagnets by molecular beam epitaxy (MBE) is of high technical interest for spintronic applications such as devices exploiting spin orbit torque (SOT)
Mn4N, which is a room temperature ferrimagnet, has been successfully grown by MBE by a few groups.2–5. These MBE grown Mn4N films show strong perpendicular magnetic anisotropy (Ku= 1.1 × 105 J/m3), low saturation magnetization (Ms= 6.6 × 104 A/m),6 large domain size (∼millimeter size on STO),5 and record high domain wall velocities driven by spin transfer torque
We report the successful MBE growth of Mn4N films on four substrates: cubic MgO, and wide bandgap semiconductors (SiC and GaN) and sapphire, the last three of which are hexagonal
Summary
Epitaxial growth of ferromagnets by molecular beam epitaxy (MBE) is of high technical interest for spintronic applications such as devices exploiting spin orbit torque (SOT). Mn4N, which is a room temperature ferrimagnet, has been successfully grown by MBE by a few groups.2–5 These MBE grown Mn4N films show strong perpendicular magnetic anisotropy (Ku= 1.1 × 105 J/m3), low saturation magnetization (Ms= 6.6 × 104 A/m), large domain size (∼millimeter size on STO), and record high domain wall velocities driven by spin transfer torque (up to 900 m/s).. These MBE grown Mn4N films show strong perpendicular magnetic anisotropy (Ku= 1.1 × 105 J/m3), low saturation magnetization (Ms= 6.6 × 104 A/m), large domain size (∼millimeter size on STO), and record high domain wall velocities driven by spin transfer torque (up to 900 m/s).6 This makes Mn4N attractive for spintronic devices. Scitation.org/journal/adv magnetotransport properties of the Mn4N epitaxial films on the four substrates is conducted
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