Abstract
We have investigated magnetic properties of porous silicon prepared by anodical etching of n- and p-type Si wafers. Measurements with a SQUID magnetometer have revealed in our samples ferromagnetism characterized by hysteretic behaviour, saturation in fields above 1.3 T and a remanent moment persisting up to T c ⋍ 570 K. Electron paramagnetic resonance investigations have shown the presence of paramagnetic centers related with silicon dangling bonds.
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