Abstract

The effects of La doping with and without vacancies on the magnetism of a ZnO(0001)–Zn polar surface were studied using the generalized gradient approximation + U (GGA + U) method of density functional theory to determine the magnetism source of La-doped ZnO. Results revealed that La doping with O vacancy did not cause ZnO ferromagnetism, but La-doped ZnO with Zn vacancy was ferromagnetic. The net magnetic moment was primarily related to the unpaired electron amount of the O 2p state and slightly modified by orbital and anomalous magnetic moments. The anomalous magnetic moment originated from the radiating magnetism moment via quantum electrodynamics and was confirmed to exist via theoretical calculations of magnetism. Formation energy showed that La doping easily generated Zn vacancies in ZnO, but magnetic quenching occurred when the ratio of La ions to Zn vacancies was 2:1. The unpaired O 2p electrons induced by Zn vacancies were the magnetism source of La-doped ZnO. Moreover, the Curie temperature of La-doped ZnO with Zn vacancy reached room temperature. Results showed that the ZnO(0001)–Zn polar surface can be utilized as the surface of ZnO-based diluted magnetic semiconductors because of its unipolarity.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call