Abstract
We have investigated in a systematic way the magnetic properties of Fe3O4 films grown directly on a Si(001) substrate and on a copper (Cu) buffer layer using the electron beam deposition technique. The effect of the Cu buffer layer thickness on the microstructure and magnetic properties of Fe3O4 has been studied. The effect of annealing on the magnetic properties of Fe3O4 films with various Cu buffer layer thicknesses was also studied. For Fe3O4 films deposited directly on Si(001), we observed two distinct switching fields due to the presence of two magnetic phases which are weakly coupled at the substrate interface.
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