Abstract

Magnetic properties of Er-doped GaAs (GaAs:Er) and Er,O-codoped GaAs (GaAs:Er,O) have been investigated by using superconducting quantum interference devices (SQUID) magnetometer at low temperature. In M-H curves of GaAs:Er,O, a characteristic magnetization due to the codoping with Er and O was observed at 2 K, while GaAs:Er exhibited much smaller magnetization. The saturation magnetization of GaAs:Er,O slightly increased with Er concentration. These results were discussed in relation to an atomic configuration formed selectively around Er3+ ions in GaAs:Er,O. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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