Magnetic properties of (Bi1\u2212xLax)(Fe,Co)O3 films fabricated by a pulsed DC reactive sputtering and demonstration of magnetization reversal by electric field

Munusamy Kuppan,Satoru Yoshimura,Genta Egawa,Sivaperuman Kalainathan,Daichi Yamamoto

doi:10.1038/s41598-021-90547-2

Munusamy Kuppan, Satoru Yoshimura + Show 3 more

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https://doi.org/10.1038/s41598-021-90547-2

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Abstract

(Bi1−xLax)(Fe,Co)O3 multiferroic magnetic film were fabricated using pulsed DC (direct current) sputtering technique and demonstrated magnetization reversal by applied electric field. The fabricated (Bi0.41La0.59)(Fe0.75Co0.25)O3 films exhibited hysteresis curves of both ferromagnetic and ferroelectric behavior. The saturated magnetization (Ms) of the multiferroic film was about 70 emu/cm3. The squareness (S) (= remanent magnetization (Mr)/Ms) and coercivity (Hc) of perpendicular to film plane are 0.64 and 4.2 kOe which are larger compared with films in parallel to film plane of 0.5 and 2.5 kOe. The electric and magnetic domain structures of the (Bi0.41La0.59)(Fe0.75Co0.25)O3 film analyzed by electric force microscopy (EFM) and magnetic force microscopy (MFM) were clearly induced with submicron scale by applying a local electric field. This magnetization reversal indicates the future realization of high performance magnetic device with low power consumption.

Highlights

(Bi1−xLax)(Fe,Co)O3 multiferroic magnetic film were fabricated using pulsed DC sputtering technique and demonstrated magnetization reversal by applied electric field
Generally say, BiFeO3 films have a high leakage current density at room temperature[1], so several methods such as substitution of atoms had been performed for reduction of the leakage current density and improvement of ferroelectric property of B iFeO3 films
Crystallization of Bi–Ba–Fe–O films on Ta/Pt layer fabricated by pulsed DC reactive sputtering was accelerated compared with the case of Bi–Ba–Fe–O films fabricated by RF direct sputtering[17]

Summary

Introduction

(Bi1−xLax)(Fe,Co)O3 multiferroic magnetic film were fabricated using pulsed DC (direct current) sputtering technique and demonstrated magnetization reversal by applied electric field. The electric and magnetic domain structures of the (Bi0.41La0.59)(Fe0.75Co0.25)O3 film analyzed by electric force microscopy (EFM) and magnetic force microscopy (MFM) were clearly induced with submicron scale by applying a local electric field This magnetization reversal indicates the future realization of high performance magnetic device with low power consumption. Substitution of E r2, La3,4, or Sc5) for Bi, and substitution of C r6,7, Mn8,9, or T i10,11 for Fe. To apply magnetic devices of these B iFeO3 based films, improvement of their ferromagnetic property such as large saturation magnetization (Ms), large coercivity (Hc), and perpendicular magnetic anisotropy is more important. Suitable multiferroic materials with ferromagnetism with high Ms and ferroelectricity at room temperature, such as ( Bi1−xBax)FeO3 powder[12] have been reported. To improve the magnetic properties of B iFeO3-based films, we aimed to produce highly qualified La and Co doped B iFeO3 films by using reactive pulsed DC sputtering method

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