Abstract
Amorphous hydrogenated carbon thin films were deposited on Si and glassceramics substrates by reactive ion-plasma magnetron sputtering. Thin films were without (a-C:H) and with Ni nanoparticles (a-C:H:Ni). Measurement of absorption coefficient in 220-850 nm spectral range using spectrophotometer and following approximation applying of Tauc method shows that obtained a-C:H thin films material has near 3.6 eV optical band gap and confirmed that this material is amorphous semiconductor. Thin films with Ni nanoparticles have a high complex permittivity ε* and permeability μ* (ε′ ≈ 1000–10000, ε′′ ≈ 100–1500, μ′ ≈ 10–70, μ′′ ≈ 0.4-10). Some magnetic parameters of thin films were determined.
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