Abstract
The Curie temperature (Tc) of amorphous FeZr alloys can be greatly enhanced by doping with light elements. In this investigation, ion implantation is used to dope Fe93Zr7 thin films with H, He, B, C, and N. Extended X-ray absorption fine structure measurements confirm that the amorphous structure is preserved upon implantation for all samples, except for the N-implanted sample which is partially crystallized. The Curie temperature increases from 124 K for the pristine FeZr sample to about 400 K for the (FeZr)B0.11 sample. The increase of Tc is proportional to the increase in the average Fe-Fe distance, which allows us to conclude that the dominant cause of the Tc enhancement of amorphous Fe93Zr7 upon doping is a volume effect.
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