Abstract
Magnetic properties and structure of FeN/AlN multilayered films deposited by r.f. magnetron sputtering were studied. Hc decreased as the ratio of a FeN layer thickness to a AIN one became small. Hc also decreased with decreasing film thickness of FeN/AIN bilayers. Hc and 4 πMs in a 22A/11A multilayered film were 1 Oe and 8.5 kG, respectively. The film had high permeability, μ', which was 800 at a 5 MHz and 650 even at a 100 MHz because of high resistivity. SEM observation and μ-AES analysis revealed the film had a layered structure. X-ray diffraction made it clear that high permeability was ascribed to fine grains and smaller lattice mismatch between layers compared to the thick layered films.
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