Abstract
Magnetisation, magnetic susceptibility, resistivity, optical-reflectivity and point-contact tunnelling measurements were used to study an FeSi single crystal. Magnetisation measurements revealed a ferromagnetic contribution which is more pronounced below 100 K. Magnetic susceptibility, resistivity, far-infrared and point-contact data are consistent with the characterisation of FeSi as a narrow-gap semiconductor or Kondo insulator. Fits to our transport data suggest the formation of a gap at about Eg ≈ 650 K and a fit to our susceptibility data indicates a gap at about Eg ≈ 1200 K. The point-contact gap is filled at about 60 K. Optical spectra show a significant reduction of the low frequency reflectivity below 200 K.
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