Abstract

The results of the magnetization and magnetoresistance studies performed on single crystals of hexagonal HoGa 2 and DyGa 2 compounds are presented. They have an antiferromagnetic alignment of the magnetic moments of R-ions in the basal plane below the Néel temperatures 7.6 and 11 K respectively. The field-induced multi-step magnetic phase transitions in the basal plane are accompanied by the great changes in the electrical resistivity of both compounds. Using data on the magnetoresistance, two field-induced intermediate phases in HoGa 2 are found, when the field was applied along the a axis, which is of easy magnetization. The magnetic phase diagram of HoGa 2 along a axes is determined.

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