Magnetic phase structure of Mn-doped III-V semiconductor quantum wells

Abstract

We present a self-consistent calculation of magnetic phase structure in modulation-doped dilute magnetic III-V semiconductor quantum wells. The spin-split subband structure is calculated at finite temperature and magnetic-field effects on the carrier-induced magnetism are examined in a weak-field regime. The exchange correlation of free carriers is shown to enhance the ferromagnetic tendency. And the temperature ${T}_{\mathrm{th}},$ below which the system spontaneously becomes fully spin polarized, increases as the doping concentration ${N}_{a}$ in nonmagnetic barriers increases. Hysteresis loop of the magnetic quantum well predicts that the remnant magnetization is enhanced as one increases the modulation-doped acceptor impurity concentration.