Abstract
The Co doped ITO samples are prepared by Co ions implanted ITO thin films. The implantation dosage of Co ions is 5 × 1015, 1 × 1016, 2 × 1016 cm−2, respectively. Then the samples are annealed by rapid thermal annealing in vacuum. The structure of the samples is characterized by glancing angle X-ray diffraction and high resolution transmission electron microscopy. The observed dislocation causes the lattice distortion and the interplanar distance becomes larger. The carrier density gradually decreases as the Co ions dosage increases. The optical and electrical properties of the samples are affected by the carrier density. The gradually reduced band gap can be explained by Burnstein-Moss effect. Though the electrical and optical properties are deteriorated after Co implanted ITO thin films, the strength of ferromagnetism enhances as the dosage of Co ions increase.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
