Abstract
We demonstrate that the tunneling magneto-resistance (TMR) can be used to modulate terahertz (THz) wave propagation through a magnetic tunnel junctions (MTJ). Operating at the THz frequency range, a maximal modulation depth of 60% is reached for the parallel state of the MTJ with the thickness of 77.45 nm, by using a small magnetic field of 30 mT. The THz conductivity spectrum of the MTJ is governed by the spin-dependent electron tunneling. This findings open that the MTJ device will have potential applications in THz magnetic modulators, filtering and sensing.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
