Abstract

We have extended our generalized pair approximation applicable, in principle, to diluted magnetic semiconductors, in which the spatial distribution of the magnetic ions may be assumed to be random and homogeneous, to systems with a variable magnetic ion concentration. Using our model, which may be called the extended generalized pair approximation, we have developed a quantitative description of the magnetization in dilute magnetic semiconductor quantum structures with moderate magnetic ion concentration (x10%). The latest models describing the radial dependence of the exchange interaction, clustering, and interface mixing are also discussed.

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