Abstract
55Mn NMR experiments have been performed at 4.2 K on a series of Mn5(Ge1−xSix)3 epitaxial films (0⩽x⩽0.55) to investigate changes introduced by silicon when it replaces germanium in a hexagonal Mn5Ge3 crystal lattice. The Si/Ge substitution was found to reduce the magnetic moment on manganese located in the 6(g) sublattice creating a new population of manganese atoms with distinctly lower magnetic moment. This effect is attributed to the orbital overlay due to a lattice distortion introduced by Si. Interestingly, these modified Mn sites retain the orbital moment practically unaltered. The amount of new manganese environments in the 6(g) sublattice coincides with a probability of Mn having two Si neighbors as first neighbors. Mn atoms located in the 4(d) sublattice are not significantly affected by the Si substitution in the studied concentration range.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
