Magnetic impurity in a quantum well of a IV - VI narrow-gap semiconductor

Abstract

We study the magnetic density distribution created by a separate magnetic impurity placed inside a IV - VI semiconductor quantum well. The absence of carriers is assumed, so that the induced magnetic density is due to virtual electron - hole excitations. The origin of this effect is analogous to the vacuum screening of charge in quantum electrodynamics. We calculate the magnetic density for different positions of the impurity within the well. The interaction between magnetic impurities in the quantum well is also calculated.