Abstract
A peak in the transconductance of a n-InAs MOS device is observed below the conduction-band population threshold for accumulation. The freeze-out of the peak in an applied magnetic field is strongest when the field is oriented nornal to the accumulation layer and obeys a decay law consistent with that expected for the limit in which the magnetic energy is large compared to impurity binding energies in InAs. The data are interpreted in terms of a 2D impurity band in InAs and contrasted to observations of 2D impurity band behaviour in Si inversion layers and in GaAs quantum wells and δ-doping layers.
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