Abstract
AbstractWe describe magnetic field sensors based on a recently discovered magnetoresistance (MR) effect in nonmagnetic organic semiconductor sandwich devices. The MR effect reaches up to 10% in a magnetic field of 10 mT at room temperature. We perform an extensive experimental characterization of this effect. We found that the MR effect is only weakly temperature dependent and does not depend on sign and direction of the applied magnetic field. We also measured the device response to alternating magnetic fields up to 100 kHz. To the best of our knowledge, the discovered MR effect is not adequately described by any of the MR mechanisms known to date.
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