Abstract
In this work, an InAs classical Hall effect based magnetic field sensor with linear response up to 1.00 T at room temperature is reported. InAs used is homogeneous polycrystalline n-type material. A supplementary simulation circuit and a suitable soft are used to insure a linear dependence of the Hall voltage on the magnetic induction. A ‘butterfly’ form for the sensor is used to increase the magnitude of the Hall signal. The influence of the magnetoresistive effect and irradiation with thermal neutrons on the response of the sensor is also investigated.
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