Abstract
The Giant MagnetoResistance (GMR) effect, discovered in France in 1988, has already been applied in magnetic sensors and has promise in other applications. The rapid acceptance of this technology is due to GMR’s unique characteristics such as high sensitivity, good temperature stability, and excellent linearity over a wide sensing range. In this article GMR materials are described as are their application in magnetic field sensors. New GMR structures utilizing spin valves and spin dependent tunneling (SDT) will offer even more potential for expanding the horizon of solid state magnetic sensing. Comparisons are made to sensors using conventional technology. Integrated GMR sensors that have signal conditioning and output electronics monolithically integrated with the sensor offer further uses of this new technology. Beyond the sensor itself, other control system functions have the potential for using the same GMR materials to make magnetic isolators and nonvolatile memories.
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