Abstract
基于高功率脉冲磁控溅射(HiPIMS)技术开发的筒形溅射阴极, 配合电磁系统可有效地提升等离子体的输运效率. 然而电磁系统的引入反作用于筒内放电特性, 从而使靶面放电面积和放电强度无法同时维持. 鉴于此, 本文通过调整磁场布局, 研究了靶面切向(横向)磁场和法向(纵向)磁场对靶面放电的作用规律, 优化后靶面切向磁场分布更加均匀, 磁场强度高于40 mT的靶面区域占比由51%增至67%, 同时法向峰值强度外移, 强度由73 mT增至96 mT. 采用Ar/Cr体系放电发现：相同工艺条件下, 优化后的溅射阴极辉光变亮, 靶电流增大, 放电面积变宽, 放电特性得到显著提升. 利用等离子体整体模型仿真和发射光谱仪检测发现优化后离子电流和光谱强度得到明显提升, Cr粒子密度提高一倍, 增至2.6 × 10<sup>20</sup> m<sup>–3</sup>, 且离化率上升至92.1%, 同时输出离子通量提高近一倍, 实现了靶面放电与离子输出的双促进.
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