Magnetic field induced metal–insulator transitions in p-SiGe

Abstract

Low density modulation doped p-SiGe, where the holes lie in a strained SiGe quantum well, frequently exhibits anomalous insulating behaviour between filling factors ν=2 and 1. There is also anomalous metallic behavior with a metal–insulator transition between the two. It is shown that in these samples exchange effects are sufficiently large to induce the paramagnetic–ferromagnetic phase transition predicted by Giuliani and Quinn in 1985, also that the metallic and insulating behavior is associated with the coincidence of two Landau levels of opposite spin. A model calculation shows that while a ferromagnetic polarization may occur at integer filling factors screening suppresses it for non-integer filling factors. It is argued the Landau levels then stick-together and allow a spin-density instability to form. Because of the strong spin–orbit coupling in p-SiGe the transport properties of this state differ from those of other systems where a similar quantum Hall ferromagnet probably forms.