Abstract
The effect of the constant magnetic-field induced generation of oxygen–vacancy defects in Czochralski-grown silicon crystals was detected for the first time. The qualitative theory of the effect is given. It assumes that the effect arises from excitation of the Si–O bond of interstitial oxygen and is valid for both constant and pulsed magnetic fields. Experimental verification of the theory in the combined constant and pulsed fields strongly confirmed it.
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