Abstract

The exciton binding energy with geometrical confinement and a phosphorous alloy content in a cylindrical GaAs_(1-x)P_x/GaAs_(0.6)P_(0.4) (x ≤ 0.3) strained quantum dot is investigated. The band offset is calculated using model solid theory. The strained GaAs_(1-x)P_x/GaAs_(0.6)P_(0.4) quantum dot includes the strong built-in electric field due to the spontaneous and piezoelectric polarizations. Numerical calculations are performed using a variational procedure within the single band effective mass approximation with the magnetic field. The magnetic field induced interband emission energy of the strained GaAsP quantum dot is investigated for various phosphorous alloy contents. The exciton oscillator strength and the exciton lifetime for radiative recombination as a function of the dot radius with the effect of the magnetic field strength and the phosphorus concentration are computed.

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