Abstract
Photoluminescence measurements at 2 K are described for Zn1-xMnxSe (x approximately=0.01) epitaxial layers grown by MOCVD on GaAs. The dominant feature is the I2 emission due to excitons bound at neutral donors (D0X). When magnetic fields of several tesla are applied, the emission shifts to lower energy and increases dramatically in intensity, in a way similar to that previously reported for Cd1-xMnxSe and Cd1-xMnxTe. The changes occur because the exchange enhancement of the magnetic field is sufficient for the lowest energy level of the free exciton to sweep across the D0X levels, so that the bound exciton becomes destabilised.
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