Abstract
The free-electron cyclotron resonance in n-type GaAs with rather weak impurity doping in a regular sequence of sheets shows a strong dependence of the carrier scattering rate on the direction of the applied magnetic field B. For the case of B directed exactly along the sheets we find a linewidth narrowing of more than a factor of 4. This effect is due to the B-aligned trajectory of the circling electrons which extends along, but outside of, the doping sheets
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