Abstract
The influence of magnetic field on the phonon-induced hopping transitions leads to some galvanomagnetic effects in germanium and silicon crystals, e.g., magnetoresistivity in the impurity conduction. Here the probability of the hopping transitions between two donor centers in the presence of a weak magnetic field is calculated on the basis of the previous results of Myszkowski and Rogala. Only the adiabatic processes accompanied by emission or absorption of one phonon are considered. The exact form of the deformation potential is used, and both LA and TA phonons are taken into account. The theory is valid for donor centers situated on arbitrary substitutional sites in the crystal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
