Abstract

Recently the magnetic field dependence of the ultrasonic attenuation of Sb-doped Ge has been measured over a wide range of impurity concentrations at low temperatures to investigate the concentration dependence of electronic states/1/. The Sb donor has low-lying energy levels and consequently, interacts strongly with low-frequency phonons. Therefore, the system Ge:Sb is suitable to study the concentration dependence of impurity states using the ultrasonic method. It has been found that the magnetic field dependence of the attenuation coefficient, which is determined by that of electronic levels and relaxation rates, depends strongly on the donor concentration in the region less than about 1017 cm-3.

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