Magnetic Field Control of THz Relaxation Oscillations in RTDs With Diluted Magnetic Semiconductor Layers

Abstract

This discussion concentrates on novel semiconductor quantum barrier/well devices that utilize spin-control mechanisms available in diluted magnetic materials for achieving higher-level functionality (e.g., transistor action) at very high switching speeds and frequencies. The potential simplicity in the design of DMS devices compared with standard three terminal transistors with gate controlled I-V characteristics, is that for DMS structures, no more than two terminals are required, as the magnetic field in controlling the output of the DMS device functions as a controlling third contact. Indeed, properly designed, the magnetic field can transform a passive device into an active device, tune the output of a resonant tunneling device (RTD) fabricated with DMS layers and modify the logic state of a device.