Abstract
We propose a theoretical model of magnetic field dependence of hysteretic switching in magnetic granular system. The model is based on the self-trapped electrons mechanism. Our calculations show that the switching voltage may be significantly decreased with increasing the magnetic field. The underlying mechanism is the influence of the magnetic field on electron occupation of the conduction band, which depends on the materials used in magnetic granular system, concentration of magnetic granules in the insulating matrix, applied voltage, and the charge accumulation on the granules. We support our theoretical calculations by measuring the magnetic field dependence of resistive switching behaviour in Co/Al2O3 granular multilayers. Our experimental results are in qualitative agreement with the proposed theory.
Highlights
Resistive switching (RS) is a dramatic change in resistance of various metal-insulator systems induced by the electric field
Threshold RS is a switching between high resistance states (HRS) and low resistance states (LRS) when only one stable resistance state is preferable with no applied voltage
We describe the transport properies of magnetic granular multilayers with a two-dimensional model because the main contribution to the current through magnetic granular multilayers comes from the first layer of magnetic granules
Summary
Resistive switching (RS) is a dramatic change in resistance of various metal-insulator systems induced by the electric field. Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection Our calculations suggest that the switching voltage may be significantly decreased with increasing the magnetic field.
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