Magnetic Field Analysis for Magnetron Sputtering Apparatus for Accurate Composition Control

Abstract

Authors use magnetron sputtering technique for controlling the film composition by modifying the magnetic field with an external solenoid in addition to the magnetic field with a permanent magnet on back of composite target. It is necessary to understand the contribution of the solenoid quantitatively for the effective application of this technique. The magnetic field changes by the solenoid current on the target were calculated by the finite element method (FEM), and compared with the film composition. As the solenoid current increases, magnetic tunnel region on the target (correspond with the well sputtered region by the confined plasma) moves to the centre of the target. The behaviour corresponds with the actually formed film composition. The calculated results also give an information to design the composite target and the correction value for using the already eroded target.