Abstract
The effect of the magnetic field ( H) on the electroluminescence (EL) of ZnS: Mn thin films prepared by electron-beam evaporation (EBE) and atomic layer epitaxy has been investigated at T = 1.8−77 K and up to 5 T. With rising H, brightness ( B) increases essentially near the EL threshold and decreases at high excitation levels, the charge passing through the sample changes slightly while the EL spectrum and decay rate remain unchanged. The dependences of B H / B 0 on T and H have been measured for H parallel and normal to electric field direction. Some anisotropy of the magnetic effects is observed in EBE films. The mechanisms which take into account the influence of H on the free-carrier generation rate, their free path, and the Mn 2+ impact excitation cross-section as well as the Lorenz force action on the free-carrier motion are considered. A comparison between experimental and theoretical results is made.
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