Abstract
This study deals a phenomenon of magnetic domain transition for the stepped magneto-impedance element. Our previous research shows that an element with 70° inclined easy axis has a typical characteristic of the domain transition, and the transition can be controlled by the normal magnetic field. In this paper, we apply this phenomenon and controlling method to the line arrangement adjacent to many body elements, in which mutual magnetic interaction exists. The result shows that the hidden inclined Landau–Lifshitz domain appears by applying a distributed normal field the same as an individual element.
Highlights
The observation of a magnetic domain of a thin film magnetic element is carried out using measuring methods such as electron beam [1], Kerr magneto-optic effect [2], scanning tunneling microscope, and magnetic force microscopy
The structure of the magnetic domain formed in a thin film element having a dimension from several to hundreds of micrometers was previously reported, showing that it forms several typical domain patterns, the Landau-Lifshitz domain [6], for example, and the variations as a function of the strength of the external field [7]
The following are the typical example of the study: A layered and laminated structure of thin film element [11,12,13], a miniaturization of the element [14], a consideration of magnetostriction [15], an effect of high-temperature annealing [16], an effect of element dimension for a magnetic property such as coercivity Hc [17], direct current (DC) biasing [18], and a biasing caused by the exchange force [19]
Summary
The observation of a magnetic domain of a thin film magnetic element is carried out using measuring methods such as electron beam [1], Kerr magneto-optic effect [2], scanning tunneling microscope, and magnetic force microscopy. The recent performance improvement of an apparatus of the magneto-optic Kerr effect (MOKE) has contributed to the investigation of the magneto-impedance (MI) sensor from the viewpoint of the dependence of high-frequency impedance on the magnetic domain structure of the element. A domain observation shows that the step-like change is due to a magnetization transition within three states, including the longitudinal single domain with parallel state, with an anti-parallel state and the inclined Landau–Lifshitz domain (ILLD). This phenomenon is expected to create a sensor with a memory function [24]. An effect of the application of the distributed normal field was investigated
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