Abstract
Fe 3 O 4 / p-Si and NiFe2O4/p-Si heterostructures were fabricated and their electrotransport and magnetotransport properties were studied. Both heterostructures showed rectifying as well as spin valve property below a critical temperature of 50 K which is independent of Curie temperature of magnetic films. Fe3O4/p-Si and NiFe2O4/p-Si heterostructures show giant positive junction magnetoresistance (JMR) of 2000% and 200% at 10 K, respectively. The JMR for Fe3O4/p-Si saturates at a much lower magnetic field compared to the other heterostructures, thus making it a better choice for magnetic diode.
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