Abstract
Nanoscale ferromagnets (GaMn) with the implantation of Mn+ ions have been incorporated into unintentionally doped (n-type) GaN epilayers grown on sapphire substrate by molecular beam epitaxy (MBE). Energy dispersive X-ray (EDX) spectrometry, atomic force and magnetic force microscopy (AFM and MFM) are used to characterize the GaMn precipitates which form within the GaN epilayer. MFM images reveal nanoscale ferromagnets (GaMn), and a small magnetic hysteresis loop indicates that there are ferromagnetic particles in our GaN:Mn layer involving the paramagnetic property and is measured by superconducting quantum interference device (SQUID) magnetometer.
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