Abstract
Epitaxial FeGa/IrMn bilayers with exchange biases along the FeGa[100] and [110] directions are prepared on MgO(001) single crystal substrates by magnetron sputtering through controlling the orientation of the external field <i>in situ</i> applied during growth. The effect of the exchange bias orientation on the magnetic switching process and the magnetic switching field are studied. The X-ray <i>φ</i>-scan indicates that the FeGa layer is epitaxially grown with a 45° in-plane rotation on the MgO(001) substrate along the FeGa(001)[110] direction and the MgO(001)[100] direction. The measurements of the angular dependence of the ferromagnetic resonance field and the corresponding fitting to the Kittel equation show that the samples have a superposition of fourfold symmetric magnetocrystalline anisotropy <inline-formula><tex-math id="M4">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.png"/></alternatives></inline-formula>, unidirectional magnetic exchange bias anisotropy <inline-formula><tex-math id="M5">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.png"/></alternatives></inline-formula>, and uniaxial magnetic anisotropy <inline-formula><tex-math id="M6">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.png"/></alternatives></inline-formula> with configuration of <inline-formula><tex-math id="M7">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.png"/></alternatives></inline-formula> or <inline-formula><tex-math id="M8">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.png"/></alternatives></inline-formula>. The combined longitudinal and transverse magneto-optical Kerr effect measurements show that sample with <inline-formula><tex-math id="M9">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.png"/></alternatives></inline-formula> exhibits square loops, asymmetrically shaped loops, and one-sided two-step loops in different external magnetic field directions. In contrast, the sample with <inline-formula><tex-math id="M10">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.png"/></alternatives></inline-formula> exhibits one-sided two-step and two-sided two-step loops as the magnetic field orientation changes. Because the <inline-formula><tex-math id="M11">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.png"/></alternatives></inline-formula> is superimposed by <inline-formula><tex-math id="M12">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.png"/></alternatives></inline-formula> and <inline-formula><tex-math id="M13">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.png"/></alternatives></inline-formula>, the in-plane fourfold symmetry of the magnetic anisotropy energy is broken. The local minima are no longer strictly along the in-plane <inline-formula><tex-math id="M14">\begin{document}$ \left\langle{100}\right\rangle $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.png"/></alternatives></inline-formula> directions, but make a deviation angle which depends on the relative orientation and strength of magnetic anisotropy. A model based on the domain wall nucleation and propagation is proposed with considering the different orientations of <inline-formula><tex-math id="M15">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.png"/></alternatives></inline-formula>, which can nicely explain the change of the magnetic switching route with the magnetic field orientation and fit the angular dependence of the magnetic switching fields, indicating a significant change of domain wall nucleation energy as the orientation of <inline-formula><tex-math id="M16">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.png"/></alternatives></inline-formula> changes.
Highlights
IrMn bilayers with exchange biases along the FeGa and directions are prepared on MgO(001
sputtering through controlling the orientation of the external field in situ applied during growth
The X-ray j-scan indicates that the FeGa layer is epitaxially grown with a
Summary
采用磁控溅射方法在 MgO(001) 单晶衬底上制备了交换偏置分别沿着 FeGa[100]和 [110] 方向的 FeGa/IrMn 外延交换偏置双层膜, 研究了交换偏置取向对磁化翻转过程与磁化翻转场的影响. Jiménez 等 [9] 通过改变冷却场获得 Keb 和 Ku 非共线的 Co/IrMn Zhang 等[15] 通过倾斜溅射改变Ku 的大小和方向, 在 FeGa/ IrMn 外延 EB 双层膜中实现了Ku//Keb 和Ku ⊥ Keb , 本文利用磁控溅射镀膜设备在 MgO(001) 衬底上外延生长了单晶 FeGa/IrMn 交 换偏置异质结, 通过调整生长时外加磁场的方向 改 变 Keb 方 向 , 使其分别沿着 FeGa[100] 和 [110] 的方向. 利用超高真空磁控溅射系统 (本底真空优于 1 × 10–8 Torr (1 Torr = 1.33322×102 Pa)) 在双面抛光 MgO(001) 衬底上制备了高质量外延 FeGa(10 nm)/ IrMn(10 nm) 交换偏置异质结.
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