Abstract
We studied post-growth annealing of GaMnAs thin films with large film thickness t up to 100 nm. Our results show that for films of up to t = 100 nm comparable values of Curie temperature TC and saturation magnetization Ms can be obtained as for t = 25 nm. Hence, the out-diffusion based annealing process is not thickness limited. Furthermore, anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) measurements of as-grown and annealed samples are carried out to characterize the magnetic anisotropies of the different films.
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