Abstract
Magnetic and transport properties were investigated in metal-oxide-semiconductor structures of Co3Mn2O/SiO2/Si prepared by the dc magnetron sputtering technique. Magnetic studies reveal that Co3Mn2O is a granular film consisting of CoO, MnO, Co and Mn. The effective resistance shows a marked transition for temperature at around 240 K. Both negative magnetoresistance {MR = [R(H) − R(0)]/R(0) × 100%} of −11% at 4.2 K and a large anomalous positive magnetoresistace of 70% at 300 K at a magnetic field of 6 T were observed. These phenomena can be explained by the conducting channel switching from the upper film to the Si inversion layer.
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