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Abstract
Mn:ZnO films were grown on c-plane sapphire (0001) substrates via pulsed laser deposition (PLD) with a ZnO target including manganese (Mn) at growth temperatures ranging from 500 to 700 ◦C. Optimal growth was obtained for ZnO5 wt% Mn at 700 ◦C. The magnetic behavior of Mn-doped ZnO was measured by using a superconducting quantum interference devices (SQUID) magnetometer. Mn-doped ZnO thin films on sapphire substrates exhibited strong ferromagnetic behavior at room temperature, in spite of the paramagnetism slightly contributing to the total magnetic moment of the samples. Electron paramagnetic resonance experiments provided additional evidence for the ferromagnetic properties of the Mn:ZnO system. Extended x-ray absorption fine structure (EXAFS) results revealed that Mn atoms substituted into Zn sites and suggest that the interaction among Mn atoms could play an important role in the ferromagnetism of these samples.
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