Abstract
Mn-including InAs dot structures are grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE), where Mn atoms are first deposited and then TMIn (trimethylindium) and TDMAAs (trisdimethylaminoarsenic) are supplied on GaAs substrate. Mn-including InAs dots as well as Stranski–Krastanov (S–K) mode-grown small-size InAs dots are formed on the surface. Magnetization measurement using a SQUID (superconducting quantum interference device) indicates that the easy axis of magnetization for the Mn-including InAs dots is perpendicular to the GaAs surface. The temperature dependence of magnetization suggests that Mn atoms nuclei may consist of MnGa or MnGa-rich MnGaAs. The formation process of Mn-including InAs dots is studied and the growth condition that only Mn-including InAs dots (disk-like dots) are formed is obtained. Photoluminescence (PL) emission from Mn-including InAs dots is observed.
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