Abstract
Scanning electron microscopy and high-resolution transmission electron microscopy measurements showed that the self-assembled (Ga0.8Mn0.2)As quantum wires (QWRs) grown on GaAs (100) substrates by using molecular beam epitaxy were straight crystals. The magnetization curve as functions of the magnetic field at 5K indicated that the (Ga0.8Mn0.2)As QWRs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga0.8Mn0.2)As diluted magnetic semiconductor (DMS) QWRs was as high as 350K. Near-field scanning optical microscopy spectra showed the interband transitions of the (Ga0.8Mn0.2)As QWRs, indicative of the Mn atoms acting as substituents. These results indicate that the (Ga1−xMnx)As DMS QWRs with a high Mn concentration hold promise for potential application in spin optoelectric devices operating at room temperature.
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